HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

被引：148
作者：
Fang, Z. [1 ,2 ]
Yu, H. Y. [1 ,2 ]
Li, X. [1 ]
Singh, N. [1 ]
Lo, G. Q. [1 ]
Kwong, D. L. [1 ]
机构：
[1] ASTAR, Inst Microelect, Singapore 117685, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 637998, Singapore
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 04期
关键词：
HfOx; resistive random accessmemory (RRAM); uniformity; SWITCHING UNIFORMITY;
D O I：
10.1109/LED.2011.2109033
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a significantly improved uniformity of device parameters (for cycle-to-cycle uniformity within one device and device-to-device uniformity), such as set voltage, reset voltage, and HRS and LRS resistance distributions, is successfully demonstrated on HfOx/TiOx multilayer (ML)-based resistive switching devices, as compared with HfOx-based single-layer device. In addition, the reported ML devices are free from forming process, which is greatly beneficial from the viewpoint of RRAM circuit operation. It is believed that both the Ti doping effect and the confinement of conduction filament within different dielectrics layers contribute to the improvement.
引用
收藏
页码：566 / 568
页数：3
相关论文
共 11 条
  • [1] Baek IG, 2005, INT EL DEVICES MEET, P769
  • [2] Temperature Instability of Resistive Switching on HfOx-Based RRAM Devices
    Fang, Z.
    Yu, H. Y.
    Liu, W. J.
    Wang, Z. R.
    Tran, X. A.
    Gao, B.
    Kang, J. F.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) : 476 - 478
  • [3] Lee H, 2008, STUD COMPUT INTELL, V110, P1, DOI 10.1109/IEDM.2008.4796677
  • [4] Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
    Lee, H. Y.
    Chen, Y. S.
    Chen, P. S.
    Wu, T. Y.
    Chen, F.
    Wang, C. C.
    Tzeng, P. J.
    Tsai, M. -J.
    Lien, C.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (01) : 44 - 46
  • [5] Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer
    Lv, Hangbing
    Wan, Haijun
    Tang, Tingao
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (09) : 978 - 980
  • [6] Resistive switching in transition metal oxides
    Sawa, Akihito
    [J]. MATERIALS TODAY, 2008, 11 (06) : 28 - 36
  • [7] Nanoionics-based resistive switching memories
    Waser, RaineR
    Aono, Masakazu
    [J]. NATURE MATERIALS, 2007, 6 (11) : 833 - 840
  • [8] Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
    Waser, Rainer
    Dittmann, Regina
    Staikov, Georgi
    Szot, Kristof
    [J]. ADVANCED MATERIALS, 2009, 21 (25-26) : 2632 - +
  • [9] Xu N, 2008, S VLSI TECH, P77
  • [10] Excellent Switching Uniformity of Cu-Doped MoOx/GdOx Bilayer for Nonvolatile Memory Applications
    Yoon, Jaesik
    Choi, Hyejung
    Lee, Dongsoo
    Park, Ju-Bong
    Lee, Joonmyoung
    Seong, Dong-Jun
    Ju, Yongkyu
    Chang, Man
    Jung, Seungjae
    Hwang, Hyunsang
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (05) : 457 - 459
12