Characterization of thermally evaporated copper selenide thin films for device applications

被引：7

作者：

Moger, Sahana Nagappa ^{[1
]}

Mahesha, M. G. ^{[1
]}

机构：

[1] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2022年 / 55卷

关键词：

Thin films; Physical vapour deposition; Copper selenide; XRD; Photoluminescence; Activation energy; ELECTRICAL-PROPERTIES;

D O I：

10.1016/j.matpr.2021.11.644

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper Selenide thin films were grown by thermal evaporation method on glass substrate. The properties of the thin films were characterized by XRD, UV-Visible spectroscopy, SEM-EDS, and PL analysis. The uniformity and stoichiometry of the deposited films were confirmed by SEM-EDS analysis. The XRD results confirmed the cubic phase with prominent (111) orientation. The deposited films showed very low transmittance (similar to 20%) and direct band gap of about 2.35 eV. Further, PL spectra revealed the presence of defect states present in the films. The deposited films are p-type material with carrier density of 1.14 x 10(16) cm(-3). Structural, spectroscopic, and electrical studies have confirmed the device quality of the grown films, which find potential application in the field of renewable energy. Copyright (C) 2022 Elsevier Ltd. All rights reserved.

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页码：22 / 25

页数：4

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