Growth of CaF2 on Si(111):: Imaging of the CaF interface by friction force microscopy

被引：10
作者：
Klust, A [1 ]
Pietsch, H [1 ]
Wollschlager, J [1 ]
机构：
[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期
关键词：
D O I：
10.1063/1.122337
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The initial growth state of CaF2/Si(111) has been investigated in the high-temperature regime (700 degrees C). At these growth temperatures the interface between CaF2 and Si consists of CaF with the Ca atoms bound to the Si. Using friction force microscopy it is possible to distinguish between the interfacial CaF layer and the overgrowing CaF2 with high lateral resolution: the CaF layer has a higher friction coefficient than the bulklike CaF2. This material contrast has been used to investigate the CaF2 nucleation on the interfacial CaF layer. (C) 1998 American Institute of Physics. [S0003-6951(98)04440-4].
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页码：1967 / 1969
页数：3
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