Effect of laser-plasma X-ray irradiation on crystallization of amorphous silicon film by excimer laser annealing

被引：21

作者：

Matsuo, Naoto

Uejukkoku, Kazuya

Heya, Akira

Amano, Sho

Takanashi, Yasuyuki

Miyamoto, Shuji

Mochizuki, Takayasu

机构：

[1] Univ Hyogo, Dept Mat Sci & Chem, Himeji, Hyogo 6712201, Japan

[2] Univ Hyogo, LASTI, Kamigori, Hyogo 6781205, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 41-44期

关键词：

crystallization; laser plasma soft X-ray; excimer laser annealing; poly-Si; low-temperature process;

D O I：

10.1143/JJAP.46.L1061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of laser plasma soft X-ray (LPX) irradiation on crystallization by excimer laser annealing (ELA) was investigated at low ELA energy densities. The crystalline traction at energy densities of 50 and 60 mJ/cm(2) for LPX followed by ELA is nearly equal to that at 80 to 100 mJ/cm2 for the ELA method with non-LPX irradiation. The results obtained indicate that LPX irradiation before ELA reduces the critical energy density for the start of crystallization. The combined method of LPX irradiation and ELA will enable us to realize a low-temperature process for ELA crystallization.

引用

页码：L1061 / L1063

页数：3

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