Magnetoresistance and magnetic susceptibility in CeNiSn

被引:3
|
作者
Terashima, T
Terakura, C
Aoki, H
Echizen, Y
Takabatake, T
机构
[1] Natl Res Inst Met, Tsukuba Magnet Lab, Tsukuba, Ibaraki 3050003, Japan
[2] Tohoku Univ, Ctr Low Temp sci, Sendai, Miyagi 9808578, Japan
[3] Hiroshima Univ, ADSM, Dept Quantum Matter, Higashihiroshima 7398526, Japan
来源
PHYSICA B | 2001年 / 294卷
关键词
Kondo semiconductor; magnetoresistance; magnetic susceptibility; high pressures;
D O I
10.1016/S0921-4526(00)00651-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have studied a metamagnetic-like anomaly in CeNiSn via measurements of transverse and longitudinal magnetoresistance (MR) and AC magnetic susceptibility (chi) in a wide range of temperature T, magnetic field B, and pressure p, i.e., 0.05 K less than or equal to T less than or equal to 0.9 K, 0 less than or equal to B less than or equal to 20 T, and 0 less than or equal to p less than or equal to 10kbar. We identify five field regions in which both MR and chi exhibit anomalous behavior, i.e., distinct deviation from monotonous variation as a function of B. The disparate pressure dependence of each regime cannot be explained by the pressure variation of a single parameter, viz., the Kondo temperature, and suggests that the metamagnetic-like anomaly in CeNiSn is a combination of anomalies of different origins. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:245 / 248
页数:4
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