Memory leads the way to better computing

被引：718

作者：

Wong, H. -S. Philip ^{[1
,2
]}

Salahuddin, Sayeef ^{[3
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Stanford SystemX Alliance, Stanford, CA 94305 USA

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

NATURE NANOTECHNOLOGY | 2015年 / 10卷 / 03期

基金：

美国国家科学基金会;

关键词：

Digital storage;

D O I：

10.1038/nnano.2015.29

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

New non-volatile memory devices store information using different physical mechanisms from those employed in today's memories and could achieve substantial improvements in computing performance and energy efficiency. © 2015 Macmillan Publishers Limited. All rights reserved.

引用

页码：191 / 194

页数：5

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