Characterization of self-assembled CdTe/ZnTe quantum dots

被引:2
|
作者
Kowalik, K
Kudelski, A
Golnik, A
Gaj, JA
Karczewski, G
Kossut, J
机构
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
关键词
D O I
10.12693/APhysPolA.103.539
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present microluminescence investigations of self-assembled CdTe/ZnTe quantum dots. The dots proprieties resulting from our studies are: values of optical in-plane anisotropy parameters (electron - heavy hole exchange splitting and orientation of anisotropy) and value of effective Lande factor. Parameters giving information about in-plane anisotropy possess random distribution of values with the exchange splitting from 0 to 240 mueV. The effective Lande factor values for our dots are around g* = -3.2 with a scatter of about 18%. Some PL lines exhibit sudden jumps of energetic position, related to variation of the charge state in their neighborhood.
引用
收藏
页码:539 / 544
页数:6
相关论文
共 50 条
  • [31] Deep Level Transient Spectroscopy of Hole Traps Related to CdTe Self-Assembled Quantum Dots Embedded in ZnTe Matrix
    Zielony, E.
    Placzek-Popko, E.
    Dyba, P.
    Gumienny, Z.
    Szatkowski, J.
    Dobaczewski, L.
    Karczewski, G.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (08) : 6830 - 6836
  • [32] Temperature dependence of photoluminescence intensity of self-assembled CdTe quantum dots in the ZnTe matrix under different excitation conditions
    Reznitsky, A. N.
    Klochikhin, A. A.
    Permogorov, S. A.
    PHYSICS OF THE SOLID STATE, 2012, 54 (01) : 123 - 133
  • [33] Temperature dependence of photoluminescence intensity of self-assembled CdTe quantum dots in the ZnTe matrix under different excitation conditions
    A. N. Reznitsky
    A. A. Klochikhin
    S. A. Permogorov
    Physics of the Solid State, 2012, 54 : 123 - 133
  • [34] Dynamics of charge leakage from self-assembled CdTe quantum dots
    Klopotowski, L.
    Goryca, M.
    Kazimierczuk, T.
    Kossacki, P.
    Wojnar, P.
    Karczewski, G.
    Wojtowicz, T.
    APPLIED PHYSICS LETTERS, 2010, 96 (20)
  • [35] Optical studies of spin relaxation in CdTe self-assembled quantum dots
    Mackowski, S
    Gurung, T
    Nguyen, TA
    Hewaparakrama, KP
    Jackson, HE
    Smith, LM
    Wrobel, J
    Fronc, K
    Kossut, J
    Karczewski, G
    11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 937 - 940
  • [36] Emission of Self-Assembled CdTe/ZnTe Quantum Dot Samples with Different Cap Thickness
    Nowak, S.
    Jakubczyk, T.
    Goryca, M.
    Ciosmak, P.
    Golnik, A.
    Kossacki, P.
    Wojnar, P.
    Gaj, J. A.
    ACTA PHYSICA POLONICA A, 2009, 116 (05) : 890 - 892
  • [37] Resonant Raman scattering from CdTe/ZnTe self-assembled quantum dot structures
    Baik, Seulki
    Lee, Hong Seok
    Rho, Heesuk
    CURRENT APPLIED PHYSICS, 2018, 18 (02) : 267 - 271
  • [38] Electronic properties of self-assembled CdTe quantum wires grown on ZnTe buffer layers
    Song, S. H.
    Woo, J. T.
    Kim, J. H.
    Lee, I.
    Kim, T. W.
    Lee, H. S.
    Park, H. L.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (03) : 793 - 796
  • [39] DLTS characterization of InAs self-assembled quantum dots
    Ilchenko, VV
    Lin, SD
    Lee, CP
    Tretyak, OV
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 43 - 48
  • [40] Self-assembled quantum dots
    Univ of Nottingham, Nottingham, United Kingdom
    III Vs Rev, 3 (25-30):