Preparation and characterization of ZrO2:Sm amorphous thin films by solid state photochemical deposition method

被引:12
作者
Cabello, G. [1 ]
Lillo, L. [1 ]
Caro, C. [1 ]
Chornik, B. [2 ]
Soto, M. A. [3 ,4 ]
del Rio, R. [3 ,4 ]
Tejos, M. [5 ]
机构
[1] Univ Bio Bio, Fac Ciencias, Dept Ciencias Basicas, Chillan, Chile
[2] Univ Chile, Fac Ciencias Fis & Matemat, Dept Fis, Santiago 8370415, Chile
[3] Pontificia Univ Catolica Chile, Fac Quim, Dept Quim Fis, Santiago 609441, Chile
[4] Pontificia Univ Catolica Chile, Fac Quim, Dept Quim Inorgan, Santiago 609441, Chile
[5] Univ Valparaiso, Fac Ciencias, Valparaiso, Chile
关键词
Amorphous materials; Thin films; Photoelectron spectroscopy; Luminescence; SEMICONDUCTOR NANOCRYSTALLINE POWDERS; ZRO2-EU3+ PHOSPHORS; OPTICAL-PROPERTIES; ENERGY-TRANSFER; IONS; LUMINESCENCE; METAL; PHOTOLUMINESCENCE; PRECURSORS; GLASSES;
D O I
10.1016/j.jpcs.2010.06.002
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thin films of ZrO2 loaded with 10,30 and 50 mol% Sm were prepared by a photochemical method using thin films of metal acetylacetonate complexes as precursors. The photolysis of these films induces the fragmentation of the acetylacetonate ligand and the partial reduction of metal ion together with volatile organic compounds. When the metallic complex is exposed to air, the product of the reaction is metal oxide. The photoreactivity of these films was monitored by FT-IR spectroscopy, followed by a post-annealing treatment process. The obtained films were characterized by X-ray photoelectron spectroscopy and atomic force microscopy. Photoluminescense studies of the films employed 400 nm radiation for excitation of the Sm ions present. The emission spectra showed signals arising from the (4)G(S/2)-> H-6(J) (J = 3/2, 7/2, 9/2) transitions, where the (4)G(S/2)-> H-6(3/2) transition has the highest intensity. The concentration dependence of the PL intensity was also studied. A maximum PL intensity was observed with 10 mol% Sm content but then diminished with higher Sm concentrations. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1367 / 1372
页数:6
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