Adsorbate induced refacetting: Pb chains on Si(557)

被引：40

作者：

Czubanowski, M. ^{[1
]}

Schuster, A. ^{[1
]}

Akbari, S. ^{[1
]}

Pfnuer, H. ^{[1
]}

Tegenkamp, C. ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Festkorperphys, Appelstr 2, D-30167 Hannover, Germany

来源：

NEW JOURNAL OF PHYSICS | 2007年 / 9卷

关键词：

D O I：

10.1088/1367-2630/9/9/338

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structure on the atomic and mesoscopic scale of Pb adsorbed on Si(557) has been investigated by high-resolution low energy electron diffraction (SPA-LEED). Depending on Pb coverage in the range between 1.2 and 1.6 monolayers (ML), formation of various facets [(112), (335), (223), and a meta-stable (557) orientation] is induced by the Pb layers. The facet orientation in general does not coincide with the macroscopic orientation of the (557) surface. After an initial annealing step to 600 K, starting with 1.2ML of Pb, this new vicinality can be tuned gradually and reversibly even at temperatures below 180 K by further adsorption, but also by desorption of Pb. Superstructures of the Pb layers on the terraces were identified on the most stable (223) facets. Here parts of the devil's staircase and the stripe-incommensurate (SIC) phases known from Si(111) surfaces (Yakes et al 2004 Phys. Rev. B 69 224103) develop. A new mechanism for facet formation with different orientations, based on avoidance of step decoration by adsorbed Pb, is proposed.

引用

页数：16

共 25 条

[1] Electronic structure of dense Pb overlayers on Si(111) investigated using angle-resolved photoemission [J].

Choi, W. H. ;

Koh, H. ;

Rotenberg, E. ;

Yeom, H. W. .

PHYSICAL REVIEW B, 2007, 75 (07)

[2] Doping of a surface band on Si(111)√3 x √3-Ag -: art. no. 045312 [J].

Crain, JN ;

Gallagher, MC ;

McChesney, JL ;

Bissen, M ;

Himpsel, FJ .

PHYSICAL REVIEW B, 2005, 72 (04)

[3] Low-dimensional electronic states at silicon surfaces [J].

Crain, JN ;

Himpsel, FJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 82 (03) :431-438

[4] Fractional band filling in an atomic chain structure [J].

Crain, JN ;

Kirakosian, A ;

Altmann, KN ;

Bromberger, C ;

Erwin, SC ;

McChesney, JL ;

Lin, JL ;

Himpsel, FJ .

PHYSICAL REVIEW LETTERS, 2003, 90 (17) :4-176805

[5] Fermi surfaces of surface states on Si(111)-Ag, Au [J].

Crain, JN ;

Altmann, KN ;

Bromberger, C ;

Himpsel, FJ .

PHYSICAL REVIEW B, 2002, 66 (20) :1-8

[6] Quantum size effects in quasi-free-standing Pb layers [J].

Dil, J. H. ;

Kampen, T. U. ;

Huelsen, B. ;

Seyller, T. ;

Horn, K. .

PHYSICAL REVIEW B, 2007, 75 (16)

[7] Adsorption and tunneling of atomic scale lines of indium and lead on Si(100) [J].

Dong, ZC ;

Fujita, D ;

Nejoh, H .

PHYSICAL REVIEW B, 2001, 63 (11)

[8] Growth mode of Pb films on vicinal Si(111) [J].

Hoque, E ;

Petkova, A ;

Henzler, M .

SURFACE SCIENCE, 2002, 515 (2-3) :312-322

[9] Atomically accurate Si grating with 5.73 nm period [J].

Kirakosian, A ;

Bennewitz, R ;

Crain, JN ;

Fauster, T ;

Lin, JL ;

Petrovykh, DY ;

Himpsel, FJ .

APPLIED PHYSICS LETTERS, 2001, 79 (11) :1608-1610

[10] STEP-HEIGHT-TRIPLING TRANSITION ON VICINAL SI(111) [J].

PHANEUF, RJ ;

WILLIAMS, ED .

PHYSICAL REVIEW B, 1990, 41 (05) :2991-3003

← 1 2 3 →