Oxidation rate and surface-potential variations of silicon during plasma oxidation

被引：16

作者：

Kitajima, M ^{[1
]}

Kamioka, I ^{[1
]}

Nakamura, KG ^{[1
]}

Hishita, S ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.53.3993

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the effect of de bias (-60 to +60 V) on the plasma oxidation of silicon surfaces to understand the role of ions, neutral atoms, and electrons, using real-time ellipsometry. The real-time observation shows a strong dependence of the plasma oxidation on the de bias. The results clearly reveal an enhancement of the oxidation rate by positively charged species in the utlrathin oxide him region, in addition to that by negatively charged species in conventional anodic oxidation. The plasma oxidation rate shows a minimum at around +27 V, which corresponds to the plasma potential. The evolution of the surface potential during the plasma oxidation is discussed.

引用

页码：3993 / 3999

页数：7

共 43 条

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AZZAM RM, 1989, ELLIPSOMETRY POLARIZ, pCH6

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