Modeling and characterization of program/erasure speed and retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal gate) cells for NAND flash memory

被引：6

作者：

Choi, Eun-Seok ^{[1
]}

Yoo, Hyun-Seung ^{[1
]}

Park, Kyoung-Hwan ^{[1
]}

Kim, Se-Jun ^{[1
]}

Ahn, Jung-Ryul ^{[1
]}

Lee, Myung-Shik ^{[1
]}

Hong, Young-Ok ^{[1
]}

Kim, Suk-Goo ^{[1
]}

Om, Jae-Chul ^{[1
]}

Joo, Moon-Sig ^{[1
]}

Pyi, Seung-Ho ^{[1
]}

Lee, Seaung-Suk ^{[1
]}

Lee, Seok-Kiu ^{[1
]}

Bae, Gi-Hyun ^{[1
]}

机构：

[1] Hynix Semicond Inc, Mobile & Flash Memory Div, San 136-1, Ichon Si 476701, Kyoungki Do, South Korea

来源：

2007 22ND IEEE NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP | 2007年

关键词：

D O I：

10.1109/NVSMW.2007.4290591

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：83 / +

页数：2

共 20 条

[1] TaN and Al2O3 Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS NAND Flash Memory Cells
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[2] Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack
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Son, Jun Woo
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Choi, Yang Kyu
Cho, Byung Jin
SOLID-STATE ELECTRONICS, 2020, 164
[3] Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge/Si1-xGex/Si substrates with Al2O3 gate dielectric
Shahrjerdi, D.
Nuntawong, N.
Balakrishnan, G.
Garcia-Gutierrez, D. I.
Khoshakhlagh, A.
Tutuc, E.
Huffaker, D.
Lee, J. C.
Banerjee, S. K.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03): : 1182 - 1186
[4] Charge Storage Characteristics of Pi-Gate Poly-Si Nanowires TaN-Al2O3-Si3N4-SiO2-Si Flash Memory
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Wu, Yung-Chun
Hung, Min-Feng
Chen, Jiang-Hung
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2012, 7 (09): : 8648 - 8658
[5] Incorporation effect of thin Al2O3 layers on ZrO 2-Al2O3 nanolaminates in a composite oxide-high-κ-oxide stack for floating-gate flash memory devices
R and D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea, Republic of
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 4 B (2193-2196):
[6] Incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in a composite oxide-high-κ-oxide stack for floating-gate flash memory devices
Joo, Moon Sig
Lee, Seung Ryong
Yang, Hong-Seon
Hong, Kwon
Jang, Se-Aug
Koo, Jaehyoung
Kim, Jaemun
Shin, Seungwoo
Kim, Myungok
Pyi, Seungho
Kwak, Nojung
Kim, Jin Woong
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2193 - 2196
[7] Investigation of Abnormal VTH/VFB Shifts Under Operating Conditions in Flash Memory Cells With Al2O3 High-κ Gate Stacks
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[8] Growth and characterization of Al2O3 thin films for the buffer insulator in Pt/SrBi2Nb2O9/Al2O3/Si ferroelectric gate oxide structure
Choi, HS
Lim, GS
Lee, JH
Jang, YM
Yoo, DC
Lee, JY
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METALS AND MATERIALS INTERNATIONAL, 2003, 9 (03): : 293 - 298
[9] Growth and characterization of Al2O3 thin films for the buffer insulator in Pt/SrBi2Nb2O9/Al2O3/Si ferroelectric gate oxide structure
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[10] Comparative investigation of endurance and bias temperature instability characteristics in metal-Al2O3-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory
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Park, Sungwook
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