Spin-split Conduction Subbands of III-V Semiconductor Heterojunctions

被引：0

作者：

Toloza Sandoval, M. A. ^{[1
]}

da Silva, A. Ferreira ^{[1
]}

de Andrada e Silva, E. A. ^{[2
]}

La Rocca, G. C. ^{[3
]}

机构：

[1] Univ Fed Bahia, Inst Fis, Salvador, BA, Brazil

[2] Inst Nacl Pesquisas Espaciais, Albany, NY 12201 USA

[3] CNISM, Piazza Cavalieri, I-56126 Pisa, Italy

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

Rashba; 2DEG; heterojunctions; spin-orbit;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spin-orbit splitting or Rashba alpha parameter at the Fermi energy of 2DEGs in InAlAs/InGaAs heterojunctions is calculated as a function of the electron density, with a variational solution to the multi-band envelope-function model, based on the 8-band Kane model for the bulk. Spin-dependent boundary conditions and mean-field approximation for the electron-electron interaction are used and reasonable good quantitative agreement is obtained with recent Shubnikov-de Haas experimental data.

引用

页码：391 / +

页数：2

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