Elasticity of MoS2 Sheets by Mechanical Deformation Observed by in Situ Electron Microscopy

被引:66
作者
Casillas, Gilberto [1 ]
Santiago, Ulises [1 ]
Barron, Hector [1 ]
Alducin, Diego [1 ]
Ponce, Arturo [1 ]
Jose-Yacaman, Miguel [1 ]
机构
[1] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
基金
美国国家卫生研究院;
关键词
THIN-FILM TRANSISTORS; MONOLAYER MOS2;
D O I
10.1021/jp5093459
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
MoS2 has been the focus of extensive research due to its potential applications. More recently, the mechanical properties of MoS2 layers have raised interest due to applications in flexible electronics. In this article, we show in situ transmission electron microcsopy (TEM) observation of the mechanical response of a few layers of MoS2 to an external load. We used a scanning tunneling microscope (STM) tip mounted on a TEM stage to induce deformation on nanosheets of MoS2 containing few layers. The results confirm the outstanding mechanical properties on the MoS2. The layers can be bent close to 180°. However, when the tip is retrieved the initial structure is recovered. Evidence indicates that there is a significant bond reconstruction during the bending with an outstanding capability to recover the initial bond structure. The results show that flexibility of three layers of MoS2 remains the same as a single layer while increasing the bending modulus by 3 orders of magnitude. Our findings are consistent with theoretical calculations and confirm the great potential of MoS2 for applications. © 2014 American Chemical Society.
引用
收藏
页码:710 / 715
页数:6
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