High electron mobility in nearly-dislocation-free hexagonal InN

被引：3

作者：

Chen, Ling ^{[1
,2
]}

Sheng, Shanshan ^{[1
,2
]}

Sheng, Bowen ^{[1
,2
]}

Wang, Tao ^{[3
]}

Yang, Liuyun ^{[1
,2
]}

Zhang, Baoqing ^{[1
,2
]}

Yang, Jiajia ^{[1
,2
]}

Zheng, Xiantong ^{[1
,2
]}

Chen, Zhaoying ^{[1
,2
]}

Wang, Ping ^{[1
,2
]}

Ge, Weikun ^{[1
,2
]}

Shen, Bo ^{[1
,2
,4
,5
]}

Wang, Xinqiang ^{[1
,2
,4
,5
,6
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China

[3] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[4] Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Jiangsu, Peoples R China

[5] Peking Univ, Collaborat Innovat Ctr Quantum Matter, Sch Phys, Beijing 100871, Peoples R China

[6] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 01期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

InN microcrystal; high electron mobility; nearly-dislocation-free; EPITAXY; GROWTH;

D O I：

10.35848/1882-0786/ac4449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a recorded directed-probed electron mobility of similar to 4850 cm(2) V(-1)s(-1) in nearly-dislocation-free hexagonal InN at room temperature by Hall-effect measurement. Those extremely high-quality InN are achieved through droplet-assisted epitaxy on a GaN/sapphire template by molecular beam epitaxy. They behave as crystals with a diameter of several micrometers, being confirmed to be nearly free of threading dislocation by transmission electron microscopy. The achievement of such high-mobility InN provides promising opportunities for fabricating high-speed electronic devices.

引用

页数：4

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