In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution

被引：52
|
作者：
McDonnell, S. [1 ]
Zhernokletov, D. M. [1 ]
Kirk, A. P. [1 ]
Kim, J. [1 ]
Wallace, R. M. [1 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 20期
基金：
美国国家科学基金会;
关键词：
XPS; Atomic layer deposition; Al2O3; GaSb; High mobility substrates; PASSIVATION; OXIDE; GASB; DIELECTRICS; STATES;
D O I：
10.1016/j.apsusc.2011.05.034
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
GaSb(001) was treated with (NH4)(2)S-x and the evolution of the interfacial chemistry was investigated, in situ, with monochromatic X-ray photoelectron spectroscopy (XPS), following heat treatment and exposure to trimethylaluminum (TMA) and deionized water (DIW) in an atomic layer deposition reactor. Elemental Sb (Sb-Sb bonding) as well as Sb3+ and Sb5+ chemical states were initially observed at the native oxide/GaSb interface, yet these diminished below the XPS detection limit after heating to 300 degrees C. No evidence of Ga-Ga bonding was observed whereas the Ga1+/Ga-S chemical state was robust and persisted after heat treatment and exposure to TMA/DIW at 300 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：8747 / 8751
页数：5
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