Bias dependent dual band response from InAs/Ga(In)Sb type II strain layer superlattice detectors

被引：72

作者：

Khoshakhlagh, A. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Plis, E. ^{[1
]}

Bishop, G. D. ^{[1
]}

Sharma, Y. D. ^{[1
]}

Kim, H. S. ^{[1
]}

Dawson, L. R. ^{[1
]}

Krishna, S. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 26期

关键词：

D O I：

10.1063/1.2824819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the multispectral properties of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices using an nBn heterostructure design. The optical and electrical properties of the midwave and long wave infrared (MWIR-LWIR) absorbing layers are characterized using spectral response and current-voltage measurements, respectively. The dual band response is achieved by changing the polarity of applied bias. The spectral response shows a significant change in the LWIR to MWIR ratio within a very small bias range (similar to 100 mV), making it compatible with commercially available readout integrated circuits. (c) 2007 American Institute of Physics.

引用

页数：3

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