Theory and experiment of step bunching on misoriented GaAs(001) during metalorganic vapor-phase epitaxy

被引：32

作者：

Chua, A. L. -S. ^{[1
]}

Pelucchi, E. ^{[2
]}

Rudra, A. ^{[2
]}

Dwir, B. ^{[2
]}

Kapon, E. ^{[2
]}

Zangwill, A. ^{[3
]}

Vvedensky, D. D. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2AZ, England

[2] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

[3] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2832370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present experiments and an accompanying theory for the growth modes during metalorganic vapor-phase epitaxy on vicinal GaAs(001). Our theory is based on a model that takes account of deposition, diffusion, and dissociation of molecular precursors, and the diffusion and step incorporation of atoms released by the precursors. The experimental conditions for island nucleation and growth, step flow, and step bunching are reproduced by this model, with the step bunching instability caused by the difference in molecular dissociation from above and below step edges. (C) 2008 American Institute of Physics.

引用

页数：3

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