Selective edge-growth with controlled ferroelectric-domain structure by liquid-phase epitaxy

被引：0
|
作者：
Kawaguchi, T
Imaeda, M
Fukuda, T
机构：
[1] NGK Insulators Ltd, Mizuho Ku, Nagoya, Aichi 4678530, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 193卷 / 04期
关键词：
liquid-phase epitaxy; selective edge growth; ferroelectric domain structure; substrate-surface orientation;
D O I：
10.1016/S0022-0248(98)00622-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A new liquid-phase epitaxy technique for achieving selective three-dimensional growth with controlled ferroelectric-domain structures is proposed utilizing the "edge-growth" phenomenon and poling selectivity depending on the substrate-surface orientation. LiNb1-xTaxO3 thin films with periodically switching spontaneous polarization were successfully formed on X-cut LiNbO3 substrates by modulating the surface orientation. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：605 / 609
页数：5
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