Characterizing Voltage Linearity and Leakage Current of High Density Al2O3/HfO2/Al2O3 MIM Capacitors

被引：12
|
作者：
Lee, Sung Kyun [1 ]
Kim, Kwan Soo [1 ]
Kim, Soon-Wook [1 ]
Lee, Dal Jin [1 ]
Park, Sang Jong [1 ]
Kim, Sibum [1 ]
机构：
[1] MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期
关键词：
High-k metal-insulator-metal (MIM) capacitors; leakage current; thickness dependence; voltage coefficient of the capacitance (VCC); INSULATOR-METAL CAPACITORS; DIELECTRICS;
D O I：
10.1109/LED.2010.2099200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It was found that the quadratic voltage coefficient of the capacitance (VCC) of Al2O3-based metal-insulator-metal (MIM) capacitors is inversely proportional to the square of the insulator thickness, i.e., similar to t(-2), whereas HfO2-based MIM capacitors exhibit the inverse cube relationship, i.e., similar to t(-3). Using each of their voltage linearity characteristics in combination with the VCC calculation method, the quadratic VCC of Al2O3/HfO2/Al2O3 (A/H/A)-structured MIM capacitors, with various thickness ratios of the Al2O3 and HfO2 insulators, could be well estimated. A large portion of the HfO2 insulators in the A/H/A structures improved the voltage linearity of the MIM capacitors, whereas it deteriorated the dielectric breakdown and the leakage current characteristics.
引用
收藏
页码：384 / 386
页数：3
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