Characterizing Voltage Linearity and Leakage Current of High Density Al2O3/HfO2/Al2O3 MIM Capacitors
被引:12
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作者:
Lee, Sung Kyun
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MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South KoreaMagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
Lee, Sung Kyun
[1
]
Kim, Kwan Soo
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MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South KoreaMagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
Kim, Kwan Soo
[1
]
Kim, Soon-Wook
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MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South KoreaMagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
Kim, Soon-Wook
[1
]
Lee, Dal Jin
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MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South KoreaMagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
Lee, Dal Jin
[1
]
Park, Sang Jong
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MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South KoreaMagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
Park, Sang Jong
[1
]
Kim, Sibum
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MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South KoreaMagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
Kim, Sibum
[1
]
机构:
[1] MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
High-k metal-insulator-metal (MIM) capacitors;
leakage current;
thickness dependence;
voltage coefficient of the capacitance (VCC);
INSULATOR-METAL CAPACITORS;
DIELECTRICS;
D O I:
10.1109/LED.2010.2099200
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
It was found that the quadratic voltage coefficient of the capacitance (VCC) of Al2O3-based metal-insulator-metal (MIM) capacitors is inversely proportional to the square of the insulator thickness, i.e., similar to t(-2), whereas HfO2-based MIM capacitors exhibit the inverse cube relationship, i.e., similar to t(-3). Using each of their voltage linearity characteristics in combination with the VCC calculation method, the quadratic VCC of Al2O3/HfO2/Al2O3 (A/H/A)-structured MIM capacitors, with various thickness ratios of the Al2O3 and HfO2 insulators, could be well estimated. A large portion of the HfO2 insulators in the A/H/A structures improved the voltage linearity of the MIM capacitors, whereas it deteriorated the dielectric breakdown and the leakage current characteristics.
机构:
Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
Lee, Woohui
Shin, Hyungchul
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Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
Shin, Hyungchul
Chae, Jinwoong
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Sungkyunkwan Univ, Dept Semicond Convergence Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
Chae, Jinwoong
Lee, Jehoon
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Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
Lee, Jehoon
Eom, Deokjoon
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Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
Eom, Deokjoon
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机构:
Oh, Joohee
Kim, Hyoungsub
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机构:
Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
Sungkyunkwan Univ, Dept Semicond Convergence Engn, Suwon 16419, South KoreaSungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
机构:
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710121, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
Wu, Li-Fan
Zhang, Yu-Ming
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
Zhang, Yu-Ming
Lv, Hong-Liang
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
Lv, Hong-Liang
Zhang, Yi-Men
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Chin, Xian 710071, Peoples R China
机构:
Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
Korea Inst Mat Sci, Adv Characterizat & Anal Grp, Chang Won 642831, South KoreaUniv Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
Choi, Minseok
Janotti, Anderson
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Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
Janotti, Anderson
Van de Walle, Chris G.
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Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
机构:
Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R ChinaAnhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
Gao, Juan
He, Gang
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Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R ChinaAnhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
He, Gang
Sun, Zhaoqi
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机构:
Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R ChinaAnhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
Sun, Zhaoqi
Chen, Hanshuang
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机构:
Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R ChinaAnhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
Chen, Hanshuang
Zheng, Changyong
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Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R ChinaAnhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
Zheng, Changyong
Jin, Peng
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机构:
Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R ChinaAnhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
Jin, Peng
Xiao, Dongqi
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Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R ChinaAnhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
Xiao, Dongqi
Liu, Mao
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机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R ChinaAnhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China