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Characterizing Voltage Linearity and Leakage Current of High Density Al2O3/HfO2/Al2O3 MIM Capacitors
被引:12
|作者:
Lee, Sung Kyun
[1
]
Kim, Kwan Soo
[1
]
Kim, Soon-Wook
[1
]
Lee, Dal Jin
[1
]
Park, Sang Jong
[1
]
Kim, Sibum
[1
]
机构:
[1] MagnaChip Semicond Ltd, CE Specialty Proc Dev, Cheongju 361728, South Korea
关键词:
High-k metal-insulator-metal (MIM) capacitors;
leakage current;
thickness dependence;
voltage coefficient of the capacitance (VCC);
INSULATOR-METAL CAPACITORS;
DIELECTRICS;
D O I:
10.1109/LED.2010.2099200
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
It was found that the quadratic voltage coefficient of the capacitance (VCC) of Al2O3-based metal-insulator-metal (MIM) capacitors is inversely proportional to the square of the insulator thickness, i.e., similar to t(-2), whereas HfO2-based MIM capacitors exhibit the inverse cube relationship, i.e., similar to t(-3). Using each of their voltage linearity characteristics in combination with the VCC calculation method, the quadratic VCC of Al2O3/HfO2/Al2O3 (A/H/A)-structured MIM capacitors, with various thickness ratios of the Al2O3 and HfO2 insulators, could be well estimated. A large portion of the HfO2 insulators in the A/H/A structures improved the voltage linearity of the MIM capacitors, whereas it deteriorated the dielectric breakdown and the leakage current characteristics.
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页码:384 / 386
页数:3
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