Microstructure and improved electrical properties of Ti-substituted BiFeO3 thin films

被引：19
作者：
Sharma, Govind N. [1 ,2 ]
Dutta, Shankar [1 ]
Pandey, Akhilesh [1 ]
Singh, Sushil Kumar [1 ]
Chatterjee, Ratnamala [2 ]
机构：
[1] DRDO, Solid State Phys Lab, Lucknow Rd, Delhi 110054, India
[2] Indian Inst Technol, Dept Phys, HauzKhas, New Delhi 110016, India
来源：
MATERIALS RESEARCH BULLETIN | 2017年 / 95卷
关键词：
thin films; microstructure; X-ray diffraction; electrical properties; FERROELECTRIC PROPERTIES; DOPED BIFEO3; OPTICAL-PROPERTIES; MULTIFERROICS; MULTILAYERS;
D O I：
10.1016/j.materresbull.2017.07.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper discussed about the effects of Ti-substitution (0-10 atom%) at Fe-site on the structure and electrical properties of BiFeO3 (BFO) films deposited by sol-gel technique. The lattice parameters of the phase pure (perovskite) polycrystalline BFO films are found to be reduced up-to 0.38% and 1.43% in a and c directions respectively due to the Ti-substitution. Grain sizes of the BFO films are found to be increasing with the Ti-substitution. The maximum remnant polarization of 70 mu C/cm(2)is observed in 2.5% Ti-substituted BFO film. The leakage current density (similar to 10(-4)A/cm(2) at 0.6 MV/cm applied electric field) of the Ti substituted BFO film (10%) is found to be three orders lower than the pristine BFO film. Reason for the improved electrical properties seems to be due to replacement of Fe3+ withTi(4+)ions which in turn might help in reducing the effect of oxygen vacancies defects. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：223 / 228
页数：6
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