Reliability Performance of Advanced Organic Interposer (CoWoS®-R) Packages

被引:20
作者
Lin, Po-Yao [1 ]
Yew, M. C. [1 ]
Yeh, S. S. [1 ]
Chen, S. M. [1 ]
Lin, C. H. [1 ]
Chen, C. S. [1 ]
Hsieh, C. C. [1 ]
Lu, Y. J. [1 ]
Chuang, P. Y. [1 ]
Cheng, H. K. [1 ]
Jeng, Shin-Puu [1 ]
机构
[1] Taiwan Semicond Mfg Co, 6,Creat Rd 2,Hsinchu Sci Pk, Hsinchu 30077, Taiwan
来源
IEEE 71ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2021) | 2021年
关键词
chiplets; CoWoS-R; finite-element modeling; HBM; heterogeneous integration; organic interposer; reliability;
D O I
10.1109/ECTC32696.2021.00125
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Organic interposer (CoWoS (R)-R) is one of the most promising heterogeneous integration platform solutions for high-speed and artificial intelligence applications. Components such as chiplets, high-bandwidth memory, and passives can be integrated into an organic interposer with excellent yield and reliability. This paper presents reliability results for advanced organic interposer packages. Multiple redistribution layers (RDLs) form an effective stress buffer for reducing the stress induced in the C4 joint and its underfill from the mismatch between the top dies and substrate. Four RDL lines with a minimum line width/spacing of 2/2 mu m exhibited excellent robustness, ensuring the long functional lives of high-performance computing products. We successfully demonstrated the outstanding fatigue performance of the C4 joint reliability. Various large packages passed stringent reliability tests, specifically TCC (-65 degrees C to 150 degrees C) up to 1300 cycles for heterogeneous integration package and TCG (-40 degrees C to 125 degrees C) up to 2500 cycles for chiplet integration package. The results of the sanity cross-sectional check indicate no interfacial delamination or crack. In addition, an in-depth analysis conducted using finite-element modeling revealed that the packages had superior reliability performance compared with a large monolithic flip-chip package.
引用
收藏
页码:723 / 728
页数:6
相关论文
共 8 条
[1]  
[Anonymous], JESD47K STRESS TEST
[2]  
[Anonymous], 2016, ANSYS VERS 15 0
[3]  
[Anonymous], JESD22A113D JEDEC
[4]  
Beck N, 2018, ISSCC DIG TECH PAP I, P40, DOI 10.1109/ISSCC.2018.8310173
[5]  
Choquette Jack, 2017, IEEE HOT CHIPS S
[6]  
Lepak K., 2017, IEEE HOT CHIPS S
[7]  
Lin Yi-Hang, IEEE ECTC 2019
[8]  
Singh Gaurav, 2017, IEEE HOT CHIPS S