Sixteen-phase CMOS millimetre-wave voltage-controlled oscillator

被引:1
|
作者
Huang, G. [1 ,2 ]
Kim, S. -K. [1 ]
Gao, Z. [3 ]
Ma, H. [4 ]
Fusco, V. [2 ]
Kim, B. -S. [1 ]
机构
[1] Sungkyunkwan Univ, Sch Informat & Commun, RF Microelect Design Lab, Suwon, South Korea
[2] Queens Univ Belfast, Inst Elect Commun & Informat Technol, Belfast, Antrim, North Ireland
[3] Harbin Inst Technol, Dept Microelect, Harbin, Peoples R China
[4] Harbin Inst Technol, Shenzhen Grad Sch, Elect & Informat Engn Dept, Harbin, Peoples R China
关键词
D O I
10.1049/iet-map.2010.0002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 16-phase complementary metal oxide semiconductor (CMOS) millimetre-wave voltage-controlled oscillator (VCO), which adopts an injected signal amplitude enhancing technique, is presented in this work. The oscillator consists of eight VCO cores coupled together to form a ring. In the coupling path, transmission line inductors are introduced to enhance the amplitude of the injected signal. As a result, the coupling factor between two nearby VCO cores is increased by a factor larger than one. This releases the strict trade-off between multi-phase imbalance and phase noise. The VCO adopting the amplitude enhanced technique was fabricated using 0.13 mu m CMOS radio frequency (RF) technology. The circuit oscillates from 19.69 to 23.48 GHz. The measured phase noise at 1 MHz offset ranges from -91 to -98 dBc/Hz. The entire circuit, including all output buffers, dissipates 50.4 mW from a 1.2 V DC supply. The calculated figure of merit for the VCO is 168.
引用
收藏
页码:2057 / 2061
页数:5
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