A low-temperature TiO2/SnO2 electron transport layer for high-performance planar perovskite solar cells

被引:50
作者
Li, Nan [1 ,2 ]
Yan, Jin [1 ,2 ]
Ai, Yuqian [1 ]
Jiang, Ershuai [1 ,2 ]
Lin, Liujin [1 ]
Shou, Chunhui [3 ]
Yan, Baojie [1 ]
Sheng, Jiang [1 ]
Ye, Jichun [1 ,2 ]
机构
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Zhejiang Energy Grp R&D, Hangzhou 310003, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
perovskite solar cell; electron transport layer; TiO2/SnO2; low temperature; energy band alignment; COMPACT LAYER; EFFICIENT; TIO2;
D O I
10.1007/s40843-019-9586-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conventional titanium oxide (TiO2) as an electron transport layer (ETL) in hybrid organic-inorganic perovskite solar cells (PSCs) requires a sintering process at a high temperature to crystalize, which is not suitable for flexible PSCs and tandem solar cells with their low-temperatureprocessed bottom cell. Here, we introduce a low-temperature solution method to deposit a TiO2/tin oxide (SnO2) bilayer towards an efficient ETL. From the systematic measurements of optical and electronic properties, we demonstrate that the TiO2/SnO2 ETL has an enhanced charge extraction ability and a suppressed carrier recombination at the ETL/perovskite interface, both of which are beneficial to photo-generated carrier separation and transport. As a result, PSCs with TiO2/SnO2 bilayer ETLs present higher photovoltaic performance of the baseline cells compared with their TiO2 and Sn-2 single-layer ETL counterparts. The champion PSC has a power conversion efficiency (PCE) of 19.11% with an open-circuit voltage (V-oc) of 1.15 V, a short-circuit current density (k) of 22.77 mA cm(-2), and a fill factor (FF) of 72.38%. Additionally, due to the suitable band alignment of the TiO2/SnO2 ETL in the device, a high V-oc, of 1.18 V is achieved. It has been proven that the TiO2/SnO2 bilayer is a promising alternative ETL for high efficiency PSCs.
引用
收藏
页码:207 / 215
页数:9
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