Highly stable field emission properties from well-crystalline 6-Fold symmetrical hierarchical ZnO nanostructures

被引:16
作者
Algarni, H. [1 ]
Umar, Ahmad [2 ,3 ]
Kim, S. H. [2 ]
Al-Assiri, M. S. [2 ,4 ]
Al-Salami, A. E. [1 ]
机构
[1] King Khalid Univ, Dept Phys, Fac Sci, POB 9004, Abha 61413, Saudi Arabia
[2] Najran Univ, PCSED, POB 1988, Najran 11001, Saudi Arabia
[3] Najran Univ, Fac Sci & Arts, Dept Chem, POB 1988, Najran 11001, Saudi Arabia
[4] Najran Univ, Fac Sci & Arts, Dept Phys, POB 1988, Najran 11001, Saudi Arabia
关键词
ZnO; Hierarchical nanostructures; Field emission; Emission stability; GROWTH-MECHANISM; ZINC-OXIDE; THERMAL EVAPORATION; OPTICAL-PROPERTIES; EFFECT-TRANSISTORS; NANOWIRE ARRAYS; NANOROD ARRAYS; PHOTOLUMINESCENCE; NANOPARTICLES; PERFORMANCE;
D O I
10.1016/j.ceramint.2017.06.010
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Herein, we report the growth, characterization and field emission application of well-crystalline 6-fold symmetrical hierarchical ZnO nanostructures grown on silicon substrate by thermal evaporation process. The detailed morphological characterizations revealed that the prepared material possess six-fold structures in which ZnO nanoneedles are symmetrically grown on each facets of core hexagonal ZnO nanorods in such a manner that they made beautiful 6-fold symmetrical hierarchical structure. The detailed structural studies confirmed that the grown hierarchical structures possess well-crystallinity with wurtzite hexagonal phase. The room-temperature photoluminescence (PL) spectrum exhibited a strong UV emission confirming good optical properties. The Raman-scattering revealed the wurtzite hexagonal phase for as-grown hierarchical structures. The field emission properties of the 6-fold symmetrical hierarchical ZnO nanostructures were tested and a turn on voltage equal to 2.8 kV, corresponds to emission current of 65 nA, was observed. A threshold voltage of 4.6 kV with a maximum emission current of about 9.36 mu A was also recorded. A high emission current stability profile over a period of similar to 7000 s was noted for the fabricated FE device.
引用
收藏
页码:11753 / 11758
页数:6
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