Mixed proximity/holographic mask technology for 50nm VLSI by x-ray lithography

被引：0

作者：

Burge, RE ^{[1
]}

Knauer, JN ^{[1
]}

Yuan, XC ^{[1
]}

Powell, K ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES II | 1998年 / 3331卷

关键词：

x-ray lithography; computer generated holography;

D O I：

10.1117/12.309582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of mixed proximity and binary phase holographic X-ray masks for feature sizes of 50nm is continued for mask to wafer gaps of (say) 50 mu m for printing into photoresist with 1nm X-rays. The maximum gap for binary holographic correction for image blurring on reconstruction is shown to be limited by the symmetry impressed by the binary phase encoding. The computation of the holograms is described. A hologram is calculated in patches limited in size by computational restrictions and procedures are described for superposition at the wafer of structures reconstructed from adjacent patches. The fabrication of binary masks is well suited to electron beam writing.

引用

页码：280 / 290

页数：11