Weibull Analysis of Dielectric Breakdown in a Self-Assembled Nanodielectric for Organic Transistors

被引：43

作者：

Schlitz, Ruth A. ^{[1
,3
]}

Yoon, Kun Ho ^{[1
,3
]}

Fredin, Lisa A. ^{[2
,3
]}

Ha, Young-geun ^{[2
,3
]}

Ratner, Mark A. ^{[1
,2
,3
]}

Marks, Tobin J. ^{[1
,2
,3
]}

Lauhon, Lincoln J. ^{[1
,3
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[3] Northwestern Univ, Mat Res Sci & Engn Ctr, Evanston, IL 60208 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2010年 / 1卷 / 22期

关键词：

THIN-FILM TRANSISTORS; ACCURATE EXPERIMENTAL-DETERMINATION; FIELD-EFFECT TRANSISTORS; THEORETICAL BASIS; NANOWIRE TRANSISTORS; GATE NANODIELECTRICS; INTRINSIC BREAKDOWN; SHAPE FACTOR; STATISTICS; DISTRIBUTIONS;

D O I：

10.1021/jz101325r

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of thermal annealing on leakage current and dielectric breakdown in self assembled nanodielectric (SAND) mental-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of >= 300 degrees C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (V-g = 3V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope beta approximate to 4.5 prior to thermal annealing and by beta >= 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.

引用

页码：3292 / 3297

页数：6

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