A 580-μW 1.8-6 GHz multiband switched-resonator SiGeVCO with 0.3-V supply voltage

被引:7
作者
Mukhopadhyay, Rajarshi [1 ]
Lee, Chang-Ho
Laskar, Joy
机构
[1] Texas Instruments Inc, Dallas, TX 75081 USA
[2] Samsung RFIC Design Ctr, Atlanta, GA 30308 USA
[3] Georgia Inst Technol, Sch ECE, Georgia Elect Design Ctr, Atlanta, GA 30308 USA
关键词
AMOS varactor; BiCMOS; cross-coupled; differential; low-power; low-voltage; multiband; SiGe; switched-resonator; voltage controlled oscillator (VCO);
D O I
10.1109/LMWC.2007.908056
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a fully integrated low-power low-voltage multiband switched-resonator differential cross-coupled voltage controlled oscillator (VCO) implemented in 0.18 mu m SiGe-BiCMOS technology. The VCO operates with a supply voltage as low as 0.29 V, owing to the low knee-voltage provided by the technology, and consumes a total power of 580 mu W. Utilizing a switched-resonator, the VCO covers a wide switched frequency range of 1.83-2.97 GHz and 4.36-6.17 GHz with measured phase noise of around -112.2 dBc/Hz with 0.29 V supply and -119.7 dBc/Hz with 1 V supply at 1 MHz offset. Since high-frequency bands experience higher phase noise than the low frequency bands, high-Q short microstrip line inductors have been used for the high-frequency bands, To the best of the authors' knowledge, the reported VCO achieves the widest switched frequency tuning range with lowest core supply voltage.
引用
收藏
页码:793 / 795
页数:3
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