Deposition factors and band gap of zinc-blende AlN

被引：114

作者：

Thompson, MP ^{[1
]}

Auner, GW

Zheleva, TS

Jones, KA

Simko, SJ

Hilfiker, JN

机构：

[1] Wayne State Univ, Dept Chem Engn & Mat Sci, Detroit, MI 48202 USA

[2] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

[3] USA, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

[4] Ford Motor Co, Dept Chem, Sci Res Lab, Dearborn, MI 48121 USA

[5] JA Woollam Co Inc, Lincoln, NE 68508 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 06期

关键词：

D O I：

10.1063/1.1346999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Successful deposition of zinc-blende AlN films with thickness up to 1000 Angstrom was performed with plasma source molecular beam epitaxy. The films were epitaxial to the Si(001) substrate. The formation of a thin 3C-SiC layer on the Si(001) surface is one of the important factors for the formation of zinc-blende AlN. Evidence for the presence of 3C-SiC is provided by an Auger electron spectroscopy depth profile and a high-resolution transmission electron microscopy plot profile. Spectroscopic ellipsometry was used to determine the optical constants of zinc-blende AlN in the range from 1.85 to 6.5 eV. The extinction coefficient data indicates that zinc-blende AlN is an indirect semiconductor with a band gap of similar to5.34 eV. (C) 2001 American Institute of Physics.

引用

页码：3331 / 3336

页数：6

共 50 条

[1] Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures
Ferrara, P
Binggeli, N
Baldereschi, A
PHYSICAL REVIEW B, 1997, 55 (12) : R7418 - R7421
[2] Band gap engineering of wurtzite and zinc-blende GaN/AlN superlattices from first principles
Cui, X. Y.
Delley, B.
Stampfl, C.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (10)
[3] Electronic structure of wurtzite and zinc-blende AlN
P. Jonnard
N. Capron
F. Semond
J. Massies
E. Martinez-Guerrero
H. Mariette
The European Physical Journal B - Condensed Matter and Complex Systems, 2004, 42 : 351 - 359
[4] Electronic structure of wurtzite and zinc-blende AlN
Jonnard, P
Capron, N
Semond, F
Massies, J
Martinez-Guerrero, E
Mariette, H
EUROPEAN PHYSICAL JOURNAL B, 2004, 42 (03): : 351 - 359
[5] Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities
Roeppischer, M.
Goldhahn, R.
Rossbach, G.
Schley, P.
Cobet, C.
Esser, N.
Schupp, T.
Lischka, K.
As, D. J.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
[6] Stabilization of zinc-blende cubic AlN in AlN/W superlattices
Kim, IW
Madan, A
Guruz, MW
Dravid, VP
Barnett, SA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (05): : 2069 - 2073
[7] Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
Fritsch, D
Schmidt, H
Grundmann, M
PHYSICAL REVIEW B, 2003, 67 (23):
[8] Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN
Fan, WJ
Li, MF
Chong, TC
Xia, JB
SOLID STATE COMMUNICATIONS, 1996, 97 (05) : 381 - 384
[9] Empirical tight-binding band structure of zinc-blende nitrides GaN, AlN, and BN
Ferhat, M
Zaoui, A
Certier, M
Khelifa, B
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1996, 195 (02): : 415 - 424
[10] Homopolar band gap and thermal activation parameters of plasticity of diamond and zinc-blende semiconductors
Siethoff, H
JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) : 3301 - 3305

← 1 2 3 4 5 →