Deposition factors and band gap of zinc-blende AlN

被引：117

作者：

Thompson, MP ^{[1
]}

Auner, GW

Zheleva, TS

Jones, KA

Simko, SJ

Hilfiker, JN

机构：

[1] Wayne State Univ, Dept Chem Engn & Mat Sci, Detroit, MI 48202 USA

[2] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

[3] USA, Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

[4] Ford Motor Co, Dept Chem, Sci Res Lab, Dearborn, MI 48121 USA

[5] JA Woollam Co Inc, Lincoln, NE 68508 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 06期

关键词：

D O I：

10.1063/1.1346999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Successful deposition of zinc-blende AlN films with thickness up to 1000 Angstrom was performed with plasma source molecular beam epitaxy. The films were epitaxial to the Si(001) substrate. The formation of a thin 3C-SiC layer on the Si(001) surface is one of the important factors for the formation of zinc-blende AlN. Evidence for the presence of 3C-SiC is provided by an Auger electron spectroscopy depth profile and a high-resolution transmission electron microscopy plot profile. Spectroscopic ellipsometry was used to determine the optical constants of zinc-blende AlN in the range from 1.85 to 6.5 eV. The extinction coefficient data indicates that zinc-blende AlN is an indirect semiconductor with a band gap of similar to5.34 eV. (C) 2001 American Institute of Physics.

引用

页码：3331 / 3336

页数：6

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