Electronic structure of Pd thin films on Re(0001) studied by high-resolution core-level and valence-band photoemission

被引:38
|
作者
Mun, BS [1 ]
Lee, C
Stamenkovic, V
Markovic, NM
Ross, PN
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevB.71.115420
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structures of Pd thin films grown epitaxially on a Re(0001) single-crystal surface are investigated with high-resolution photoelectron spectroscopy. A clear splitting of the Pd 3d(5/2) core level is observed as the coverage of Pd increases from submonolayer to multilayer. The peak at higher binding energy is assigned to emission from the Pd layer at the interface with the Re substrate, while the other is from "bulk" Pd. The observed valence-band spectrum of the pseudomorphic Pd monolayer on Re clearly revealed a reduction in the density of states near the Fermi level and shifting of the d-band center to higher binding energy. It is possible to reconcile the seemingly contradictory core level and valence-band shifts based on the charge-density maps from the earlier full-potential linearized augmented-plane-wave band-structure calculation by Wu and Freeman. Filling of the Pd d band by electron donation from the substrate does not occur. Rather, the correct physical picture for the electronic modification is substrate-induced charge polarization in the Pd layer.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] In situ core-level and valence-band photoelectron spectroscopy of reactively sputtered tungsten oxide films
    Bouvard, O.
    Krammer, A.
    Schuler, A.
    SURFACE AND INTERFACE ANALYSIS, 2016, 48 (07) : 660 - 663
  • [22] Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations
    Ahola-Tuomi, M.
    Punkkinen, M. P. J.
    Laukkanen, P.
    Kuzmin, M.
    Lang, J.
    Schulte, K.
    Pietzsch, A.
    Perala, R. E.
    Rasanen, N.
    Vayrynen, I. J.
    PHYSICAL REVIEW B, 2011, 83 (24)
  • [23] CORE-LEVEL PHOTOEMISSION MEASUREMENTS OF VALENCE-BAND OFFSETS IN HIGHLY STRAINED HETEROJUNCTIONS - SI-GE SYSTEM
    SCHWARTZ, GP
    HYBERTSEN, MS
    BEVK, J
    NUZZO, RG
    MANNAERTS, JP
    GUALTIERI, GJ
    PHYSICAL REVIEW B, 1989, 39 (02) : 1235 - 1241
  • [24] VALENCE-BAND AND SB 4D CORE-LEVEL PHOTOEMISSION OF THE XMNSB-TYPE HEUSLER COMPOUNDS (X=PT, PD, NI)
    KANG, JS
    PARK, JG
    OLSON, CG
    YOUN, SJ
    MIN, BI
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (19) : 3789 - 3800
  • [25] Valence-band electronic structure of ZnSe(001) thin films: Theory and experiment
    Plucinski, L
    Johnson, RL
    Fleszar, A
    Hanke, W
    Weigand, W
    Kumpf, C
    Heske, C
    Umbach, E
    Schallenberg, T
    Molenkamp, LW
    PHYSICAL REVIEW B, 2004, 70 (12) : 125308 - 1
  • [26] High-resolution core-level study of 6H-SiC(0001)
    Johansson, LI
    Owman, F
    Martensson, P
    PHYSICAL REVIEW B, 1996, 53 (20): : 13793 - 13802
  • [27] Bi ultra-thin crystalline films on InAs(111)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study
    Nicolai, L.
    Mariot, J-M
    Djukic, U.
    Wang, W.
    Heckmann, O.
    Richter, M. C.
    Kanski, J.
    Leandersson, M.
    Balasubramanian, T.
    Sadowski, J.
    Braun, J.
    Ebert, H.
    Vobornik, I.
    Fujii, J.
    Minar, J.
    Hricovini, K.
    NEW JOURNAL OF PHYSICS, 2019, 21 (12):
  • [28] High-resolution core-level photoemission study on GaAs(111)B surfaces
    Nakamura, Kenya
    Mano, Takaaki
    Oshima, Masaharu
    Yeom, H. W.
    Ono, Kanta
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (04)
  • [29] Submonolayer oxidation of W(110): a high-resolution core-level photoemission study
    Riffe, DM
    Wertheim, GK
    SURFACE SCIENCE, 1998, 399 (2-3) : 248 - 263