Sol-gel derived Pb(Zr,Ti)O3 heterolayered films by single-annealing

被引：1

作者：

Chen, YC ^{[1
]}

Liang, CS

Wu, JM

Yeh, TS

Hu, LJ

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Lungtan, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 5B期

关键词：

ferroelectric; PZT; sol gel; heterolayer; buffer layer; single-annealing;

D O I：

10.1143/JJAP.42.L542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric Pb(Zr,Ti)O-3 heterolayered filing were prepared by the sol gel method. The adoption of PbZr0.2Ti0.8O3 (or PbZr0.2Ti0.8O3/PbZr0.8Ti0.2O3) buffer layers under a single-annealing process resulted in significant change in grain size, gradual change in composition, and Zr-rich regions in the middle of the heterolayered films. The large grain size and compatible interface between layers are good for the ferroelectric properties, and the Zr-rich layer contributes to not only the coercive field (E-c) lowering but also the improvement of fatigue endurance.

引用

页码：L542 / L545

页数：4

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