Femtosecond laser pulse ablation of GaAs and InP: studies utilizing scanning and transmission electron microscopy

被引：49
作者：
Borowiec, A [1 ]
MacKenzie, M
Weatherly, GC
Haugen, HK
机构：
[1] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada
[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4M1, Canada
[3] McMaster Univ, Dept Mat Sci, Hamilton, ON L8S 4M1, Canada
[4] McMaster Univ, CEMD, Hamilton, ON L8S 4M1, Canada
[5] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 77卷 / 3-4期
关键词：
D O I：
10.1007/s00339-002-1949-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single pulse laser ablation of GaAs and InP using 130 fs light pulses at approximate to800 nm was studied with various techniques, in particular, scanning and transmission electron microscopies. The final state of the material near the laser-ablated region following femtosecond ablation was characterized in detail for selected laser fluences. Threshold ablation laser fluences were also obtained for both compounds.
引用
收藏
页码：411 / 417
页数：7
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