Atomic layer deposition for the fabrication of 3D photonic crystals structures:: Growth of Al2O3 and VO2 photonic crystal systems

被引:30
作者
Povey, I. M.
Bardosova, M.
Chalvet, F.
Pemble, M. E.
Yates, H. M.
机构
[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[2] Univ Salford, Inst Mat, Salford M5 4WT, Lancs, England
基金
英国工程与自然科学研究理事会; 爱尔兰科学基金会;
关键词
atomic layer deposition; ALD; photonic crystals; photonic band gap; synthetic opals;
D O I
10.1016/j.surfcoat.2007.04.108
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In order to highlight the way in which atomic layer deposition (ALD) methods may be used to prepare complex 3D structures, we consider the modification of photonic crystals such as synthetic opals that may be readily prepared from monodispersed assemblies of colloidal particles. In such materials it is well established that the photonic gap can be significantly influenced by the infiltration of the voids within the photonic crystal with a material of higher dielectric constant. In this paper we highlight the ALD infiltration of photonic crystals with Al2O3 and VO2, discussing our findings in the light of previous studies of photonic crystal infiltration. We briefly comment on the morphology of the resulting deposits in relation to the growth method employed to grow them. (C) 2007 Published by Elsevier B.V.
引用
收藏
页码:9345 / 9348
页数:4
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