High-resolution transmission electron microscopy study of interface structure and strain in epitaxial β-FeSi2 on Si (111) substrate

被引：21
作者：
Han, M [1 ]
Tanaka, M [1 ]
Takeguchi, M [1 ]
Zhang, Q [1 ]
Furuya, K [1 ]
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Nanocharacterizat Grp, Tsukuba, Ibaraki 3050003, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 255卷 / 1-2期
关键词：
interfaces; line defects; molecular beam epitaxy; semiconducting silicon compounds;
D O I：
10.1016/S0022-0248(03)01240-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Fe layer with thickness of 10 Angstrom was deposited on Si (111) 7 x 7 surface by molecular beam epitaxy (MBE) in an integrated ultrahigh vacuum (UHV) system. After annealing at 873 K, epitaxial beta-FeSi2 islands with single direction moire fringes were grown on Si substrate. In situ transmission electron microscopy (TEM) observation reveals that there is an epitaxial relationship between beta-FeSi2 and substrate, and epitaxial beta-FeSi2 islands are in strain state different from bulk beta-FeSi2 crystal. The beta-FeSi2/Si interface structure was characterized by in situ plan-viewed and ex situ cross-sectional high-resolution TEM (HRTEM) analyses. It is clear that the misfit dislocations exist at the beta-FeSi2/Si interface to accommodate the lattice parameters' mismatch. A model describing the beta-FeSi2/Si interface configuration has been established. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：93 / 101
页数：9
相关论文
共 32 条
  • [1] PHOTOCONDUCTIVITY IN N-TYPE BETA-FESI2 SINGLE-CRYSTALS
    ARUSHANOV, E
    BUCHER, E
    KLOC, C
    KULIKOVA, O
    KULYUK, L
    SIMINEL, A
    [J]. PHYSICAL REVIEW B, 1995, 52 (01): : 20 - 23
  • [2] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS
    BOST, MC
    MAHAN, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2696 - 2703
  • [3] ELECTRONIC-STRUCTURE OF BETA-FESI2
    CHRISTENSEN, NE
    [J]. PHYSICAL REVIEW B, 1990, 42 (11): : 7148 - 7153
  • [4] Structure and electronic properties of FeSi2
    Clark, SJ
    Al-Allak, HM
    Brand, S
    Abram, RA
    [J]. PHYSICAL REVIEW B, 1998, 58 (16) : 10389 - 10393
  • [5] SURFACE RELIEF AND THE MECHANISM OF A PHASE-TRANSFORMATION
    DAHMEN, U
    [J]. SCRIPTA METALLURGICA, 1987, 21 (08): : 1029 - 1034
  • [6] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW
    DODSON, BW
    TSAO, JY
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327
  • [7] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY
    FRITZ, IJ
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1080 - 1081
  • [8] Crystallography and morphology of nanosized Cr particles in a Cu-0.2% Cr alloy
    Fujii, T
    Nakazawa, H
    Kato, M
    Dahmen, U
    [J]. ACTA MATERIALIA, 2000, 48 (05) : 1033 - 1045
  • [9] X-RAY-SCATTERING STUDIES OF FESI2 FILMS EPITAXIALLY GROWN ON SI(111)
    GAY, JM
    STOCKER, P
    RETHORE, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8169 - 8178
  • [10] Interface structure at the large misfit, still common epitaxy β-FeSi2(101) or (110)//Si(111)
    Gemelli, M
    Miglio, L
    [J]. THIN SOLID FILMS, 2000, 380 (1-2) : 282 - 284
1234