Origins of GaN(0001) surface reconstructions

被引：25
作者：
Vézian, S
Semond, F
Massies, J
Bullock, DW
Ding, Z
Thibodo, PM
机构：
[1] CNRS, Ctr Rech Hetero Epitaxie & Applicat, F-06560 Valbonne, France
[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
来源：
SURFACE SCIENCE | 2003年 / 541卷 / 1-3期
基金：
美国国家科学基金会;
关键词：
gallium nitride; molecular beam epitaxy; reflection high-energy electron diffraction (RHEED); scanning tunneling microscopy; surface relaxation and reconstruction;
D O I：
10.1016/S0039-6028(03)00950-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The reconstructions of the Ga polarity GaN(0001) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are observed with RHEED by analyzing patterns while the substrate is exposed to a fixed NH3 flux or after depositing known amounts of Ga as a function of substrate temperature. In situ STM images reveal that only a few of these reconstructions yield long-range periodicity in real space. The controversial role of arsenic on Ga induced reconstructions was also investigated using two independent MBE chambers and X-ray photoelectron spectroscopy. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：242 / 251
页数：10
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