Optical gain and saturation characteristics of quantum-dot semiconductor optical amplifiers

被引：33

作者：

Qasaimeh, O ^{[1
]}

机构：

[1] Jordan Univ Sci & Technol, Dept Elect Engn, Irbid 22110, Jordan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2003年 / 39卷 / 06期

关键词：

optical gain; output saturation intensity; quantum-dot amplifiers;

D O I：

10.1109/JQE.2003.810770

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detailed theoretical analysis of the gain characteristics of quantum-dot semiconductor optical amplifiers (QD-SOA) is presented. An analytical expression for the optical gain is derived from the quantum dot and wetting layer rate equations. Due to the better confinement of carriers in the quantum dots, our calculation shows that large unsaturated optical gain can be obtained at low operating current. Also, we found that the output saturation intensity of QD-SOA is higher than the output saturation intensity of bulk-SOA. This fact lends itself to the design of efficient low-power SOAs.

引用

页码：793 / 798

页数：6

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