Hall measurements and contact resistance in doped GaN/AlGaN heterostructures

被引：0
|
作者：
Khan, MA [1 ]
Shur, MS [1 ]
Chen, Q [1 ]
机构：
[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 21期
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on doped AlGaN/GaN heterostructures with very high values of the sheet electron concentration (up to approximately 1.5 x 10(13) cm(-2)), high Hall mobility (on the order of 800 cm(2)/Vs) and high sheet concentration-mobility product (up to approximately 10(16) 1/Vs). Transmission line model measurements of the contact resistance to these layers show that series resistance is considerably reduced by doping the GaN channel. A contact resistance of 2.3 Omega mm is demonstrated for the structure with the highest sheet carrier concentration, which corresponds to approximate to 8.8 x 10(-5) Omega cm(2) specific contact resistance. (C) 1996 American Institute of Physics.
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页码：3022 / 3024
页数：3
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