Hall measurements and contact resistance in doped GaN/AlGaN heterostructures

被引：0

作者：

Khan, MA ^{[1
]}

Shur, MS ^{[1
]}

Chen, Q ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 21期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on doped AlGaN/GaN heterostructures with very high values of the sheet electron concentration (up to approximately 1.5 x 10(13) cm(-2)), high Hall mobility (on the order of 800 cm(2)/Vs) and high sheet concentration-mobility product (up to approximately 10(16) 1/Vs). Transmission line model measurements of the contact resistance to these layers show that series resistance is considerably reduced by doping the GaN channel. A contact resistance of 2.3 Omega mm is demonstrated for the structure with the highest sheet carrier concentration, which corresponds to approximate to 8.8 x 10(-5) Omega cm(2) specific contact resistance. (C) 1996 American Institute of Physics.

引用

页码：3022 / 3024

页数：3

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