Electron transport in porous silicon

被引：16
作者：
Mathur, RG
Vivechana
Mehra, RM
Mathur, PC
Jain, VK
机构：
[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India
[2] Solid State Phys Lab, Delhi 110054, India
来源：
THIN SOLID FILMS | 1998年 / 312卷 / 1-2期
关键词：
porous silicon; transport mechanism; VRH; band edges;
D O I：
10.1016/S0040-6090(97)00322-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low field and high field DC conductivity measurements have been made on macroporous p-type porous silicon (PS) samples prepared bg anodic dissolution. The conduction mechanism is found to be due to Variable Range Hopping near the Fermi level for temperature below 150 It. At high temperatures the conduction is due to the tunneling of carriers in the localized states in the band edges near the valence band. The analysis of the data shows that PS presents a fractal structure between 1D and 2D systems. (C) 1998 Elsevier Science S.A.
引用
收藏
页码：254 / 258
页数：5
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