Passivation and thermal reactivation of Mg acceptors in p-type GaAs

被引：7

作者：

Wagener, MC ^{[1
]}

Botha, JR ^{[1
]}

Leitch, AWR ^{[1
]}

机构：

[1] Univ Port Elizabeth, Dept Phys, ZA-6000 Port Elizabeth, South Africa

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.62.15315

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on the efficient passivation of Mg-doped GaAs. The extent of the passivation was demonstrated to be highly temperature dependent, with the passivation being even more efficient than that of Zn-doped GaAs at temperatures below 140 degreesC. By performing reverse bias annealing measurements between 60 and 130 degreesC, we observed the reactivation of the Mg accepters within the high-field region of the Schottky diode. This reactivation was found to obey first-order kinetics, with a dissociation energy E-MgH = (0.90 +/- 0.03) eV and an attempt frequency nu (0) = (3 (+5)(-2)) X 10(8) s(-1). These results suggest that the Mg-H configuration is not bond centered, as also suggested by previous infrared absorption studies.

引用

页码：15315 / 15318

页数：4

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