Growth of Si1-x-yGexCy multi-quantum wells: Structural and optical properties

被引：8

作者：

Boucaud, P ^{[1
]}

Guedj, C ^{[1
]}

Julien, FH ^{[1
]}

Finkman, E ^{[1
]}

Bodnar, S ^{[1
]}

Regolini, JL ^{[1
]}

机构：

[1] FRANCE TELECOM,CNET,CNS,F-38405 MEYLAN,FRANCE

来源：

THIN SOLID FILMS | 1996年 / 278卷 / 1-2期

关键词：

chemical vapour deposition (CVD); heterostructures; optical properties; structural properties;

D O I：

10.1016/0040-6090(95)08145-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the optical properties and growth by rapid thermal chemical vapour deposition of multi-quantum well heterostructures based on the group IV elements Si, Ge and C. Si1-xGex/Si, Si1-x-yGexCy/Si, Si1-xGex/Si1-yCy and Si1-yCy/Si heterostructures were investigated by X-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS), photoluminescence and Raman spectroscopy. Different features are observed depending on the growth temperature. At 575 degrees C, carbon and germanium are incorporated as expected, whereas at lower temperatures (550 degrees C), strong segregation occurs, as indicated by the decrease in the number of periods of the heterostructure observed by SIMS and XRD. Photoluminescence identifies a defect Line associated with carbon and oxygen. Raman spectroscopy shows that, although carbon compensates for the external strain, the energy of the Si-Ge vibration mode is only weakly modified.

引用

页码：114 / 117

页数：4