Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys

被引：22
作者：
Oogane, M. [1 ]
Mizukami, S. [2 ]
机构：
[1] Tohoku Univ, Dept Appl Phys, Sendai, Miyagi, Japan
[2] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi, Japan
来源：
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2011年 / 369卷 / 1948期
关键词：
tunnel magnetoresistance; half-metal; Heusler alloy; magnetic damping; ROOM-TEMPERATURE; JUNCTIONS; FILMS; CO2MNSI;
D O I：
10.1098/rsta.2011.0011
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Some full-Heusler alloys, such as Co2MnSi and Co2MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co2MnSi Heusler alloy electrode. This result proves high spin polarization of the Heusler alloy. We also demonstrate a small magnetic damping constant in Co2FeAl epitaxial film. The very high spin polarization and small magnetic constant of Heusler alloys will be a great advantage for future spintronic device applications.
引用
收藏
页码：3037 / 3053
页数：17
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