CMOS compatible metal-insulator-metal plasmonic perfect absorbers

被引：35
|
作者：
Lefebvre, A. [1 ,2 ]
Costantini, D. [2 ]
Doyen, I. [2 ]
Levesque, Q. [2 ]
Lorent, E. [1 ]
Jacolin, D. [1 ]
Greffet, J-J. [2 ]
Boutami, S. [1 ]
Benisty, H. [2 ]
机构：
[1] CEA, LETI, MINATEC Campus,17 Ave Martyrs, F-38054 Grenoble 9, France
[2] Univ Paris 11, Inst Opt, Lab Charles Fabry, CNRS, 2 Ave Augustin Fresnel, F-91127 Palaiseau, France
来源：
OPTICAL MATERIALS EXPRESS | 2016年 / 6卷 / 07期
关键词：
EMITTER;
D O I：
10.1364/OME.6.002389
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the design, fabrication and characterization of CMOS compatible metal-insulator-metal (MIM) plasmonic resonators made of tungsten and silicon nitride for the mid-infrared range. These structures give rise to spectrally selective emission/absorption, which is of particular interest in the field of non-dispersive infrared (NDIR) gas spectroscopy. In this paper, we demonstrate large scale fabrication on 200 mm silicon wafer of such devices, and show some of their main characteristics, such as tunability, multi-spectral sources, polarization-independance and consistency between reflectivity and emissivity measurements. (C)2016 Optical Society of America
引用
收藏
页码：2389 / 2396
页数：8
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