Piezoelectric coefficient of InN thin films prepared by magnetron sputtering

被引：10

作者：

Cao, CB ^{[1
]}

Chan, HLW

Choy, CL

机构：

[1] Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China

[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[3] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China

来源：

THIN SOLID FILMS | 2003年 / 441卷 / 1-2期

关键词：

indium nitride; piezoelectric coefficient; magnetron sputtering;

D O I：

10.1016/S0040-6090(03)00889-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium nitride (InN) thin films have been deposited on Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 degreesC, InN films with (0 0 0 2) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated from the measured electrical impedance. The piezoelectric coefficient d(33) of the InN film was measured by a heterodyne interferometer and found to be 3.12+/-0. 10 pm V-1. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：287 / 291

页数：5

共 50 条

[21] COMPOSITION AND PROPERTIES OF TiNx THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING [J].

Li Hai-Yi ;

Lai Zhen-Quan ;

Zhu Xiu-Rong ;

Hu Min .

JOURNAL OF INFRARED AND MILLIMETER WAVES, 2010, 29 (04) :245-247

[22] Hybrid ZnO/polymer thin films prepared by RF magnetron sputtering [J].

Pal, Edit ;

Seemann, Torben ;

Zoellmer, Volker ;

Busse, Matthias ;

Dekany, Imre .

COLLOID AND POLYMER SCIENCE, 2009, 287 (04) :481-485

[23] Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering [J].

Borges, J. ;

Martin, N. ;

Barradas, N. P. ;

Alves, E. ;

Eyidi, D. ;

Beaufort, M. F. ;

Riviere, J. P. ;

Vaz, F. ;

Marques, L. .

THIN SOLID FILMS, 2012, 520 (21) :6709-6717

[24] Electrochromic properties of InON thin films prepared by DC magnetron sputtering [J].

Jiahao Chen ;

Xuemei Ji ;

Jiangbin Su ;

Zuming He ;

Bin Tang .

Applied Physics A, 2024, 130

[25] Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering [J].

Bing-chu Yang ;

Xiao-yan Liu ;

Fei Gao ;

Xue-long Ma .

Journal of Central South University of Technology, 2008, 15 :449-453

[26] Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering [J].

Yang Bing-chu ;

Liu Xiao-yan ;

Gao Fei ;

Ma Xue-long .

JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY, 2008, 15 (04) :449-453

[27] Hybrid ZnO/polymer thin films prepared by RF magnetron sputtering [J].

Edit Pál ;

Torben Seemann ;

Volker Zöllmer ;

Matthias Busse ;

Imre Dékány .

Colloid and Polymer Science, 2009, 287 :481-485

[28] Al-Mg-B thin films prepared by magnetron sputtering [J].

Wu, Zhanling ;

Bai, Yizhen ;

Qu, Wenchao ;

Wu, Aimin ;

Zhang, Dong ;

Zhao, Jijun ;

Jiang, Xin .

VACUUM, 2010, 85 (04) :541-545

[29] Study on photoelectricity properties of SiCN thin films prepared by magnetron sputtering [J].

Li, Qiang ;

Chen, Cheng ;

Wang, Mingge ;

Lv, Yaohui ;

Mao, Yulu ;

Xu, Manzhang ;

Wang, Yingnan ;

Wang, Xuewen ;

Zhang, Zhiyong ;

Wang, Shouguo ;

Zhao, Wu ;

Stiens, Johan .

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2021, 15 :460-467

[30] Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering [J].

杨兵初 ;

刘晓艳 ;

高飞 ;

马学龙 .

JournalofCentralSouthUniversityofTechnology, 2008, (04) :449-453

← 1 2 3 4 5 →