Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

被引：14

作者：

Joenen, Holger ^{[1
]}

Rossow, Uwe ^{[1
]}

Bremers, Heiko ^{[1
]}

Hoffmann, Lars ^{[1
]}

Brendel, Moritz ^{[1
]}

Draeger, Alexander Daniel ^{[2
]}

Metzner, Sebastian ^{[2
]}

Bertram, Frank ^{[2
]}

Christen, Juergen ^{[2
]}

Schwaiger, Stephan ^{[3
]}

Scholz, Ferdinand ^{[4
]}

Thalmair, Johannes ^{[4
]}

Zweck, Josef ^{[4
]}

Hangleiter, Andreas ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany

[2] Otto von Guericke Univ, Inst Expt Phys, D-39106 Magdeburg, Germany

[3] Univ Ulm, Inst Optoelect, D-89081 Ulm, Germany

[4] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 03期

关键词：

GaInN; metal-organic vapor phase epitaxy; photoluminescence; quantum wells; X-ray diffraction; LIGHT-EMITTING-DIODES; M-PLANE; SUBSTRATE MISCUT; STACKING-FAULTS; GAN; FIELDS; IMPACT;

D O I：

10.1002/pssb.201046334

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

GaInN/GaN multiple quantum well structures grown on polar and nonpolar surfaces have been compared with respect to the indium incorporation efficiency in the quantum wells (QWs). Under the same growth conditions X-ray diffraction measurements reveal similar growth rates and In concentrations for c-plane, a-plane, and m-plane with In contents up to 40%. These results are in good agreement with optical experiments, in particular for homoepitaxial growth. However, there is strong evidence that the optical properties of the nonpolar heteroepitaxial GaInN QWs are dominated by the high density of stacking faults in those samples. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：600 / 604

页数：5

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