In-situ study of stress evolution during solid state reaction of Pd with Si(001) using synchrotron radiation

Using X-ray diffraction experiments and curvature measurements, in-situ real-time measurements of stress are performed during solid state reaction of a palladium thin film with Si(001). From X-ray diffraction measurements and using the sin(2)psi method, we found out that the stress in the metal and in the silicide is compressive. This stress decreases all along the solid-state reaction for the silicide. We then compared our results with the qualitative model proposed by Zhang and d'Heurle. This model suggests the development of a high compressive stress (-2.4 GPa) in the silicide. (C) 2003 Elsevier B.V. All rights reserved.