Performance regeneration of InGaZnO transistors with ultra-thin channels

被引：38
作者：
Zhang, Binglei [1 ]
Li, He [1 ]
Zhang, Xijian [1 ]
Luo, Yi [1 ]
Wang, Qingpu [1 ]
Song, Aimin [1 ,2 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 09期
基金：
中国国家自然科学基金;
关键词：
FILM TRANSISTORS; CURRENT COLLAPSE; LOW-TEMPERATURE; THICKNESS; MOBILITY; LAYER;
D O I：
10.1063/1.4914296
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period. (C) 2015 AIP Publishing LLC.
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页数：5
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