Performance regeneration of InGaZnO transistors with ultra-thin channels

被引：37

作者：

Zhang, Binglei ^{[1
]}

Li, He ^{[1
]}

Zhang, Xijian ^{[1
]}

Luo, Yi ^{[1
]}

Wang, Qingpu ^{[1
]}

Song, Aimin ^{[1
,2
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 09期

基金：

中国国家自然科学基金;

关键词：

FILM TRANSISTORS; CURRENT COLLAPSE; LOW-TEMPERATURE; THICKNESS; MOBILITY; LAYER;

D O I：

10.1063/1.4914296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 32 条

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