Energy-band alignments of HfO2 on p-GaAs substrates

被引：19
|
作者：
Dalapati, Goutam Kumar [2 ]
Oh, Hoon-Jung [1 ]
Lee, Sung Joo [1 ]
Sridhara, Aaditya [2 ]
Wong, Andrew See Weng [2 ]
Chi, Dongzhi [2 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore
[2] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期
关键词：
D O I：
10.1063/1.2839406
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interfacial reaction and the energy-band alignments of HfO2 films on p-GaAs substrate were investigated by using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been demonstrated that the alloying of HfO2 with Al2O3 (HfAlO) can significantly reduce native oxides formation and increases the valence-band offsets (VBOs) at HfO2/p-GaAs interface. In addition, the effects of Si interfacial passivation layer on band alignments have also been studied. VBO at HfO2/p-GaAs, HfAlO/p-GaAs, and HfO2/Si/p-GaAs interfaces were 2.85, 2.98, and 3.07 eV, respectively. (c) 2008 American Institute of Physics.
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页数：3
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