Observation of quantum confined excited states of GaN nanocrystals

被引：27
|
作者：
Leppert, VJ [1 ]
Zhang, CJ
Lee, HWH
Kennedy, IM
Risbud, SH
机构：
[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Livermore, CA 95616 USA
[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[3] Univ Calif Davis, Dept Mech & Aeronaut Engn, Davis, CA 95616 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 23期
关键词：
D O I：
10.1063/1.121532
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN nanocrystals with an average diameter of 4.5 nm+/-1.6 nm were synthesized by pulsed laser ablation of a gallium metal target in a nitrogen atmosphere. Transmission electron microscopy and selected area electron diffraction confirmed the hexagonal structure and size of the nanocrystals. Optical absorption and photoluminescence spectroscopy revealed quantum confined excited states in the nanocrystalline samples with features at 4.43 eV (280 nm) and 5.47 eV (227 nm), (C) 1998 American Institute of Physics.
引用
收藏
页码：3035 / 3037
页数：3
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